参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min25 ms
Id - Continuous Drain Current100 mA
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage800 mV
TechnologySi
Rds On - Drain-Source Resistance4 Ohms
Typical Turn-Off Delay Time180 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time50 ns
Mounting StyleSMD/SMT
CNHTS8541290000
BrandToshiba
MXHTS85412999
Qg - Gate Charge-
JPHTS8541290100
Package / CaseTO-263-3
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingReel
PackagingCut Tape
ManufacturerToshiba
Channel ModeEnhancement
SeriesSSM3K15F
TARIC8541290000
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET LowON Res MOSFET ID=0.1A VDSS=30V
ImageToshiba SSM3K15F,LF
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.000423 oz
Pd - Power Dissipation200 mW
USHTS8541210095
TradenameMOSVI
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel