参数项参数值
参数项参数值
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2 V
Rds On - Drain-Source Resistance3.3 mOhms
Typical Turn-Off Delay Time33 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time15 ns
BrandVishay / Siliconix
Qg - Gate Charge60 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
RoHS Details
Fall Time7 ns
ImageVishay / Siliconix SQD50034EL_GE3
Product TypeMOSFET
ManufacturerVishay
Product CategoryMOSFET
SubcategoryMOSFETs
Pd - Power Dissipation107 W
DescriptionMOSFET Automotive N-Channel 60 V (D-S) 175C MOSFET
Vds - Drain-Source Breakdown Voltage60 V
TradenameTrenchFET
Number of Channels1 Channel
Rise Time7 ns