STL115N10F7AG

厂牌：ST(意法半导体)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000053359648

描述：MOSFET Automotive-grade N-channel 100 V, 0.005 Ohm typ., 107 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

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商品参数

参数项参数值

TechnologySi

ConfigurationSingle

Id - Continuous Drain Current107 A

Transistor PolarityN-Channel

Vgs th - Gate-Source Threshold Voltage2.5 V

Rds On - Drain-Source Resistance5 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time48 ns

Vgs - Gate-Source Voltage- 20 V, + 20 V

QualificationAEC-Q101

Typical Turn-On Delay Time33 ns

Minimum Operating Temperature- 55 C

CAHTS8541290000

MXHTS85412999

Qg - Gate Charge72.5 nC

KRHTS8541299000

SubcategoryMOSFETs

JPHTS8541290100

Package / CasePowerFLAT-8

Channel ModeEnhancement

Mounting StyleSMD/SMT

CNHTS8541290000

Maximum Operating Temperature+ 175 C

PackagingReel

PackagingCut Tape

Fall Time20 ns

TARIC8541290000

Unit Weight0.002681 oz

ImageSTMicroelectronics STL115N10F7AG

SeriesSTL115N10F7AG

BrandSTMicroelectronics

Pd - Power Dissipation136 W

Factory Pack Quantity3000

Product TypeMOSFET

Product CategoryMOSFET

ManufacturerSTMicroelectronics

DescriptionMOSFET LGS LV MOSFET

Vds - Drain-Source Breakdown Voltage100 V

USHTS8541290095

TradenameSTripFET

Number of Channels1 Channel

Rise Time38 ns

Moisture Sensitivity Level1 (Unlimited)