参数项参数值
参数项参数值
Forward Transconductance - Min6.4 S
ConfigurationSingle
Id - Continuous Drain Current11.5 A
Transistor PolarityP-Channel
TechnologySi
Rds On - Drain-Source Resistance470 mOhms
Transistor Type1 P-Channel
Height4.83 mm
Typical Turn-Off Delay Time40 ns
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time20 ns
Length10.67 mm
Width9.65 mm
PackagingCut Tape
PackagingMouseReel
PackagingReel
Product TypeMOSFET
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Qg - Gate Charge40 nC
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
SubcategoryMOSFETs
RoHS Details
ImageON Semiconductor / Fairchild FQB12P20TM
SeriesFQB12P20
BrandON Semiconductor / Fairchild
Unit Weight0.046296 oz
Product CategoryMOSFET
Factory Pack Quantity800
ManufacturerON Semiconductor
DescriptionMOSFET 200V P-Channel QFET
Part # AliasesFQB12P20TM_NL
Pd - Power Dissipation3.13 W
TypeMOSFET
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
Rise Time195 ns