参数项参数值
参数项参数值
ConfigurationSingle
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Rds On - Drain-Source Resistance0.45 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time54 ns
Height16.15 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width4.85 mm
Length10.65 mm
Typical Turn-On Delay Time9.5 ns
Mounting StyleThrough Hole
Factory Pack Quantity500
Unit Weight0.211644 oz
Qg - Gate Charge47.2 nC
Package / CaseTO-220-3
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
PackagingTube
SeriesCoolMOS CE
Channel ModeEnhancement
Product CategoryMOSFET
ManufacturerInfineon
DescriptionMOSFET CONSUMER
BrandInfineon Technologies
ImageInfineon Technologies IPA50R190CEXKSA2
Fall Time7.5 ns
SubcategoryMOSFETs
RoHS Details
Product TypeMOSFET
Pd - Power Dissipation32 W
Part # AliasesIPA50R190CE SP001364312
TradenameCoolMOS
Vds - Drain-Source Breakdown Voltage500 V
Number of Channels1 Channel
Rise Time8.5 ns