参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min85 S
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
CNHTS8541290000
Vgs th - Gate-Source Threshold Voltage900 mV
TechnologySi
Rds On - Drain-Source Resistance5.1 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15 ns
MXHTS85423999
Vgs - Gate-Source Voltage- 8 V, + 8 V
Length6 mm
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
Typical Turn-On Delay Time6.5 ns
Height1 mm
Package / CaseVSONP-8
Development KitTPS40007EVM-001, TPS51220EVM
Product TypeMOSFET
KRHTS8541299000
Maximum Operating Temperature+ 150 C
CAHTS8541290000
JPHTS8541290100
Minimum Operating Temperature- 55 C
Qg - Gate Charge8.9 nC
TARIC8542399000
ManufacturerTexas Instruments
Product CategoryMOSFET
SubcategoryMOSFETs
SeriesCSD17310Q5A
RoHS Details
BrandTexas Instruments
Channel ModeEnhancement
ImageTexas Instruments CSD17310Q5A
Factory Pack Quantity2500
USHTS8541290095
DescriptionMOSFET 30V N Channel NexFET Power MOSFET
Fall Time5 ns
Unit Weight0.009877 oz
Pd - Power Dissipation3.1 W
TradenameNexFET
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time11.6 ns
Moisture Sensitivity Level1 (Unlimited)