STGF30M65DF2

厂牌：ST(意法半导体)

包装：TUBE 1

类目：元器件 > 分立器件 > IGBT晶体管

编号：B000053360436

描述：IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low lossIGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss

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商品参数

参数项参数值

Gate-Emitter Leakage Current+/- 250 uA

Maximum Gate Emitter Voltage20 V

Collector- Emitter Voltage VCEO Max650 V

TechnologySi

ConfigurationSingle

Collector-Emitter Saturation Voltage1.55 V

MXHTS85412999

PackagingTube

BrandSTMicroelectronics

ImageSTMicroelectronics STGF30M65DF2

KRHTS8541299000

Mounting StyleThrough Hole

JPHTS8541290100

Maximum Operating Temperature+ 175 C

Package / CaseTO-220FP-3

Minimum Operating Temperature- 55 C

CAHTS8541290000

CNHTS8541210000

TARIC8541290000

Continuous Collector Current at 25 C60 A

Unit Weight0.068784 oz

Continuous Collector Current Ic Max60 A

Pd - Power Dissipation38 W

SeriesSTGF30M65DF2

DescriptionIGBT Transistors PTD IGBT & IPM

Product TypeIGBT Transistors

Factory Pack Quantity1000

SubcategoryIGBTs

ManufacturerSTMicroelectronics

Product CategoryIGBT Transistors

USHTS8541290095