STGWA8M120DF3

厂牌：ST(意法半导体)

包装：TUBE 1

类目：元器件 > 分立器件 > IGBT晶体管

编号：B000053360833

描述：dbm供货查询数据IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low lossIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss

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商品参数

参数项参数值

Maximum Gate Emitter Voltage20 V

Collector- Emitter Voltage VCEO Max1200 V

TechnologySi

ConfigurationSingle

Collector-Emitter Saturation Voltage1.85 V

MXHTS85412999

PackagingTube

ImageSTMicroelectronics STGWA8M120DF3

Mounting StyleThrough Hole

Maximum Operating Temperature+ 175 C

JPHTS8541290100

Package / CaseTO-247-3

Minimum Operating Temperature- 55 C

CAHTS8541290000

CNHTS8541290000

TARIC8541290000

Continuous Collector Current at 25 C16 A

SeriesSTGWA8M120DF3

Pd - Power Dissipation167 W

DescriptionIGBT Transistors PTD IGBT & IPM

BrandSTMicroelectronics

ManufacturerSTMicroelectronics

Product TypeIGBT Transistors

SubcategoryIGBTs

Factory Pack Quantity600

Product CategoryIGBT Transistors

USHTS8541290095