参数项参数值
参数项参数值
Gate-Emitter Leakage Current100 nA
Maximum Gate Emitter Voltage20 V
ConfigurationSingle
Collector- Emitter Voltage VCEO Max600 V
TechnologySi
Width5.31 mm
Collector-Emitter Saturation Voltage1.95 V
Height20.7 mm
Length15.87 mm
Factory Pack Quantity240
MXHTS85412999
KRHTS8541299000
BrandInfineon Technologies
Unit Weight0.191185 oz
Mounting StyleThrough Hole
Package / CaseTO-247-3
CAHTS8541290000
JPHTS8541290100
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 175 C
PackagingTube
Product TypeIGBT Transistors
ImageInfineon Technologies IKW30N60H3FKSA1
SeriesHighSpeed 3
CNHTS8541290000
ManufacturerInfineon
TARIC8541290000
Product CategoryIGBT Transistors
RoHS Details
SubcategoryIGBTs
Continuous Collector Current at 25 C60 A
Pd - Power Dissipation187 W
Part # AliasesIKW30N60H3 SP000703042
USHTS8541290095
TradenameTRENCHSTOP