参数项参数值
参数项参数值
Gate-Emitter Leakage Current100 nA
Maximum Gate Emitter Voltage20 V
Collector- Emitter Voltage VCEO Max600 V
ConfigurationSingle
TechnologySi
Collector-Emitter Saturation Voltage1.9 V
MXHTS85412999
KRHTS8541299000
DescriptionIGBT Transistors LOW LOSS DuoPack 600V 30A
Unit Weight0.172842 oz
Package / CaseTO-247-3
JPHTS8541290100
Mounting StyleThrough Hole
CAHTS8541290000
Minimum Operating Temperature- 40 C
PackagingTube
Factory Pack Quantity240
Maximum Operating Temperature+ 175 C
BrandInfineon Technologies
ImageInfineon Technologies IKW30N60TFKSA1
SeriesTRENCHSTOP IGBT
Product TypeIGBT Transistors
CNHTS8541290000
TARIC8541290000
ManufacturerInfineon
Product CategoryIGBT Transistors
RoHS Details
SubcategoryIGBTs
Continuous Collector Current at 25 C45 A
Pd - Power Dissipation187 W
Continuous Collector Current Ic Max39 A
Part # AliasesIKW30N60T SP000054887
USHTS8541290095
TradenameTRENCHSTOP
Moisture Sensitivity Level1 (Unlimited)