IKW30N60TFKSA1

厂牌:Infineon(英飞凌)
包装:TUBE 1
类目:元器件 > 分立器件 > IGBT晶体管
编号:B000053361085
描述:IKW30N60 - DISCRETE IGBT WITH ANTI-PARALLEL DIODE
最新价格近期成交20单+
数量价格(含税)
1¥10.2999
50¥8.5778
240¥8.1778
库存:170交期:3-5Days起订:1增量:1
数量:
X
10.2999(单价)
合计:
¥10.30
商品满500包邮
商品参数
参数项参数值
参数项参数值
Gate-Emitter Leakage Current100 nA
Maximum Gate Emitter Voltage20 V
Collector- Emitter Voltage VCEO Max600 V
ConfigurationSingle
TechnologySi
Collector-Emitter Saturation Voltage1.9 V
MXHTS85412999
KRHTS8541299000
DescriptionIGBT Transistors LOW LOSS DuoPack 600V 30A
Unit Weight0.172842 oz
Package / CaseTO-247-3
JPHTS8541290100
Mounting StyleThrough Hole
CAHTS8541290000
Minimum Operating Temperature- 40 C
PackagingTube
Factory Pack Quantity240
Maximum Operating Temperature+ 175 C
BrandInfineon Technologies
ImageInfineon Technologies IKW30N60TFKSA1
SeriesTRENCHSTOP IGBT
Product TypeIGBT Transistors
CNHTS8541290000
TARIC8541290000
ManufacturerInfineon
Product CategoryIGBT Transistors
RoHS Details
SubcategoryIGBTs
Continuous Collector Current at 25 C45 A
Pd - Power Dissipation187 W
Continuous Collector Current Ic Max39 A
Part # AliasesIKW30N60T SP000054887
USHTS8541290095
TradenameTRENCHSTOP
Moisture Sensitivity Level1 (Unlimited)