MJE5852G

厂牌：ON(安森美)

包装：TUBE 1

类目：元器件 > 分立器件 > 双极晶体管

编号：B000053362188

描述：Trans GP BJT PNP 400V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube

商品参数

参数项参数值

ConfigurationSingle

Collector- Base Voltage VCBO450 V

Maximum DC Collector Current8 A

Collector- Emitter Voltage VCEO Max400 V

Continuous Collector Current8 A

MXHTS85412999

Transistor PolarityPNP

TechnologySi

Emitter- Base Voltage VEBO6 V

KRHTS8541299000

Collector-Emitter Saturation Voltage2 V

DC Collector/Base Gain hfe Min15

Mounting StyleThrough Hole

Width4.83 mm

Length10.53 mm

Minimum Operating Temperature- 65 C

Height15.75 mm

JPHTS8541290100

Package / CaseTO-220-3

CNHTS8541290000

CAHTS8541290000

Maximum Operating Temperature+ 150 C

PackagingTube

ImageON Semiconductor MJE5852G

Factory Pack Quantity50

Product CategoryBipolar Transistors - BJT

BrandON Semiconductor

RoHS Details

TARIC8541290000

SeriesMJE5852

Product TypeBJTs - Bipolar Transistors

DescriptionBipolar Transistors - BJT 8A 400V 80W PNP

SubcategoryTransistors

ManufacturerON Semiconductor

USHTS8541290095

Unit Weight0.211644 oz

Pd - Power Dissipation80 W