参数项参数值
参数项参数值
Maximum Gate Emitter Voltage20 V
Collector- Emitter Voltage VCEO Max650 V
ConfigurationSingle
Collector-Emitter Saturation Voltage1.55 V
CNHTS8541290000
Package / CaseTO-247-3
Mounting StyleThrough Hole
PackagingTube
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
TARIC8541290000
ImageSTMicroelectronics STGWA75H65DFB2
RoHS Details
Factory Pack Quantity600
BrandSTMicroelectronics
Unit Weight0.215171 oz
Product TypeIGBT Transistors
ManufacturerSTMicroelectronics
Continuous Collector Current at 25 C115 A
Product CategoryIGBT Transistors
Pd - Power Dissipation375 W
DescriptionIGBT Transistors PTD IGBT & IPM
SubcategoryIGBTs
USHTS8541290095