参数项参数值
参数项参数值
TechnologySi
Id - Continuous Drain Current1 A
Vgs th - Gate-Source Threshold Voltage1 V
Transistor PolarityN-Channel
Rds On - Drain-Source Resistance150 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time42 ns
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time5.8 ns
Mounting StyleSMD/SMT
Qg - Gate Charge1.6 nC
SeriesNFET-20TSMN
Factory Pack Quantity3000
Minimum Operating Temperature- 55 C
Package / CaseSOT-363-6
Channel ModeEnhancement
Maximum Operating Temperature+ 150 C
Fall Time32 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.000280 oz
ImagePanjit PJT7800_R1_00001
Pd - Power Dissipation350 mW
TARIC8541290000
RoHS Details
USHTS8541210095
BrandPanjit
ManufacturerPanjit
Vds - Drain-Source Breakdown Voltage20 V
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
Number of Channels1 Channel
Rise Time25.8 ns
DescriptionMOSFET /T00/TR/7"/HF/3K/SOT-363/MOS/SOT/NFET-20TSMN/NF20TS-QI02/PJ///