参数项参数值
参数项参数值
DC Current Gain hFE Max450
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 50 V, 50 V
Maximum DC Collector Current-
Collector- Emitter Voltage VCEO Max- 45 V, 45 V
Continuous Collector Current- 100 mA, 100 mA
TechnologySi
ConfigurationDual
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO- 5 V, 6 V
Collector-Emitter Saturation Voltage- 0.7 V, 0.4 V
DC Collector/Base Gain hfe Min200
Factory Pack Quantity3000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
ImagePanjit BC847BPN_R1_00001
TARIC8541210000
RoHS Details
SeriesDT-03TS
ManufacturerPanjit
Unit Weight0.000280 oz
BrandPanjit
DescriptionBipolar Transistors - BJT /47P/TR/7"/HF/3K/SOT-363/TRA/SOT/DT-03TS/DT03-QI09/PJ///
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)