参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2.4 V
TechnologySi
Transistor Type1 N-Channel
Height16.51 mm
Typical Turn-Off Delay Time9 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6 ns
Length10.67 mm
Width4.7 mm
Minimum Operating Temperature- 55 C
Package / CaseTO-220-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 175 C
Qg - Gate Charge16.4 nC
Factory Pack Quantity50
ImageTexas Instruments CSD19534KCS
PackagingTube
Product TypeMOSFET
BrandTexas Instruments
DescriptionMOSFET 100V N-Channel NexFET Pwr MOSFET
RoHS Details
Product CategoryMOSFET
SeriesCSD19534KCS
Channel ModeEnhancement
ManufacturerTexas Instruments
SubcategoryMOSFETs
Unit Weight0.211644 oz
Fall Time1 ns
Pd - Power Dissipation118 W
TradenameNexFET
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel