参数项参数值
参数项参数值
DC Current Gain hFE Max500
Collector- Base Voltage VCBO- 30 V, 60 V
Maximum DC Collector Current- 8 A, 8 A
Collector- Emitter Voltage VCEO Max- 30 V, 30 V
Continuous Collector Current- 1.8 A, 2 A
ConfigurationDual
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO- 7 V, 7 V
DC Collector/Base Gain hfe Min200
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT 30V PWR TRANS
ManufacturerToshiba
Package / CaseSOT-25-5
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingReel
PackagingMouseReel
ImageToshiba HN4B102J(TE85L,F)
TARIC8541210000
RoHS Details
SeriesHN4B102
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation1.1 W
BrandToshiba
USHTS8541290095