参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT300 MHz
ConfigurationSingle
Collector- Base Voltage VCBO- 40 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max- 40 V
Continuous Collector Current- 0.2 A
Transistor PolarityPNP
TechnologySi
Emitter- Base Voltage VEBO- 5 V
Height1 mm
Collector-Emitter Saturation Voltage- 0.3 V
Length2.2 mm
Factory Pack Quantity3000
Width1.35 mm
PackagingMouseReel
PackagingCut Tape
PackagingReel
Minimum Operating Temperature- 55 C
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
ImageDiodes Incorporated MMST3906-7-F
Product CategoryBipolar Transistors - BJT
RoHS Details
DescriptionBipolar Transistors - BJT -40V 200mW
SeriesMMST39
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
Unit Weight0.000176 oz
Pd - Power Dissipation200 mW