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DMN63D8L-7
厂牌：DIODES(美台)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000053367701
描述：MOSFET N-CH 30V 350MA SOT23
商品参数
参数项参数值
参数项参数值
Height0.975 mm
Length2.9 mm
Forward Transconductance - Min80 mS
ConfigurationSingle
Transistor PolarityN-Channel
Id - Continuous Drain Current350 mA
TechnologySi
Vgs th - Gate-Source Threshold Voltage800 mV
RoHS Details
Rds On - Drain-Source Resistance2.8 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time11.4 ns
Factory Pack Quantity3000
Package / CaseSOT-23-3
CAHTS8541210000
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541219000
Typical Turn-On Delay Time2.3 ns
ManufacturerDiodes Incorporated
BrandDiodes Incorporated
MXHTS85412101
Minimum Operating Temperature- 55 C
Product TypeMOSFET
JPHTS8541210101
TARIC8541210000
Mounting StyleSMD/SMT
USHTS8541210095
Maximum Operating Temperature+ 150 C
Width1.3 mm
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageDiodes Incorporated DMN63D8L-7
SubcategoryMOSFETs
Product CategoryMOSFET
Qg - Gate Charge0.9 nC
DescriptionMOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW
SeriesDMN63D8L
Channel ModeEnhancement
Unit Weight0.000282 oz
Fall Time16.7 ns
CNHTS8541210000
Pd - Power Dissipation520 mW
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time3.9 ns
Moisture Sensitivity Level1 (Unlimited)