参数项参数值
参数项参数值
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current4 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current4 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Collector-Emitter Saturation Voltage1.5 V
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min2000
MXHTS85412101
CNHTS8541210000
KRHTS8541219000
RoHS Details
DescriptionBipolar Transistors - BJT NPN VCEO 80V VCE 1.5 Ic 4A hFE 2000 min
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
CAHTS8541210000
JPHTS8541210101
Maximum Operating Temperature+ 150 C
BrandToshiba
TARIC8541210000
PackagingCut Tape
PackagingReel
Product CategoryBipolar Transistors - BJT
ImageToshiba 2SD1223(TE16L1,NQ)
Series2SD1223
Unit Weight0.012699 oz
SubcategoryTransistors
Factory Pack Quantity2000
ManufacturerToshiba
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation15 W
USHTS8541210095