参数项参数值
参数项参数值
Forward Transconductance - Min9.7 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current11 A
Transistor PolarityN-Channel
MXHTS85412999
Rds On - Drain-Source Resistance380 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time119 ns
Vgs - Gate-Source Voltage- 30 V, + 30 V
Width4.7 mm
KRHTS8541299000
Typical Turn-On Delay Time34 ns
Height16.3 mm
Length10.67 mm
Factory Pack Quantity1000
ManufacturerON Semiconductor
Package / CaseTO-220-3
CNHTS8541210000
JPHTS8541290100
Mounting StyleThrough Hole
CAHTS8541290000
Maximum Operating Temperature+ 150 C
PackagingTube
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
ImageON Semiconductor / Fairchild FCP11N60
TARIC8541290000
Fall Time56 ns
RoHS Details
SeriesFCP11N60
Unit Weight0.063493 oz
BrandON Semiconductor / Fairchild
Product TypeMOSFET
DescriptionMOSFET 600V 11A N-CH
Pd - Power Dissipation125 W
SubcategoryMOSFETs
Product CategoryMOSFET
TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time98 ns