参数项参数值
参数项参数值
DC Current Gain hFE Max500
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current- 2 A
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 1 A
TechnologySi
ConfigurationSingle
Transistor PolarityPNP
Collector-Emitter Saturation Voltage- 0.2 V
Emitter- Base Voltage VEBO- 7 V
DC Collector/Base Gain hfe Min200
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerToshiba
DescriptionBipolar Transistors - BJT TRANS POWER
Package / CaseSC-62-3
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageToshiba 2SA2070(TE12L,F)
Unit Weight0.001764 oz
RoHS Details
Series2SA
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity1000
Pd - Power Dissipation1 W
BrandToshiba