参数项参数值
参数项参数值
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO10 V
MXHTS85412101
DC Collector/Base Gain hfe Min50
KRHTS8541219000
ImageToshiba RN4982,LF(CT
CNHTS8541210000
USHTS8541210075
CAHTS8541210000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
JPHTS8541210101
RoHS Details
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541210000
BrandToshiba
Unit Weight0.000212 oz
Factory Pack Quantity3000
Product CategoryBipolar Transistors - Pre-Biased
Product TypeBJTs - Bipolar Transistors - Pre-Biased
SubcategoryTransistors
ManufacturerToshiba
Pd - Power Dissipation200 mW
DescriptionBipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
Typical Resistor Ratio1
Typical Input Resistor10 kOhms
Number of Channels2 Channel