STU16N65M2

STU16N65M2

厂牌：ST(意法半导体)

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000053369113

描述：

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Transistor PolarityN-Channel

Id - Continuous Drain Current11 A

TechnologySi

Vgs th - Gate-Source Threshold Voltage2 V

JPHTS8541290100

ImageSTMicroelectronics STU16N65M2

KRHTS8541299000

Rds On - Drain-Source Resistance360 mOhms

Typical Turn-Off Delay Time36 ns

Maximum Operating Temperature+ 150 C

Vgs - Gate-Source Voltage- 25 V, + 25 V

CAHTS8541290000

TARIC8541290000

Product CategoryMOSFET

Factory Pack Quantity3000

Minimum Operating Temperature- 55 C

Typical Turn-On Delay Time11.3 ns

SubcategoryMOSFETs

RoHS Details

Package / CaseTO-251-3

SeriesSTU16N65M2

PackagingTube

DescriptionMOSFET PTD HIGH VOLTAGE

USHTS8541290095

Mounting StyleThrough Hole

ManufacturerSTMicroelectronics

CNHTS8541290000

Product TypeMOSFET

BrandSTMicroelectronics

Qg - Gate Charge19.5 nC

MXHTS85412999

Channel ModeEnhancement

Fall Time11.3 ns

Unit Weight0.139332 oz

Pd - Power Dissipation110 W

Vds - Drain-Source Breakdown Voltage650 V

Number of Channels1 Channel

Rise Time8.2 ns