STI33N65M2

STI33N65M2

厂牌：ST(意法半导体)

包装：TUBE 1

类目：元器件 > 分立器件 > MOSFET

编号：B000053369140

描述：场效应管(MOSFET) STI33N65M2 I2PAK

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Transistor PolarityN-Channel

Id - Continuous Drain Current24 A

TechnologySi

Vgs th - Gate-Source Threshold Voltage2 V

JPHTS8541290100

Rds On - Drain-Source Resistance117 mOhms

Transistor Type1 N-Channel

KRHTS8541299000

ImageSTMicroelectronics STI33N65M2

Typical Turn-Off Delay Time72.5 ns

Maximum Operating Temperature+ 150 C

Vgs - Gate-Source Voltage- 25 V, + 25 V

Product CategoryMOSFET

Minimum Operating Temperature- 55 C

Factory Pack Quantity1000

CAHTS8541290000

Typical Turn-On Delay Time13.5 ns

SubcategoryMOSFETs

SeriesSTI33N65M2

Package / CaseTO-262-3

PackagingTube

DescriptionMOSFET PTD HIGH VOLTAGE

USHTS8541290095

Mounting StyleThrough Hole

TARIC8541290000

Product TypeMOSFET

ManufacturerSTMicroelectronics

CNHTS8541290000

BrandSTMicroelectronics

Qg - Gate Charge41.5 nC

RoHS Details

MXHTS85412999

TradenameMDmesh

Channel ModeEnhancement

Fall Time9 ns

Unit Weight0.050717 oz

Pd - Power Dissipation190 W

Vds - Drain-Source Breakdown Voltage650 V

Number of Channels1 Channel

Rise Time11.5 ns