参数项参数值
参数项参数值
Gate-Emitter Leakage Current100 nA
Maximum Gate Emitter Voltage20 V
Collector- Emitter Voltage VCEO Max1.2 kV
TechnologySi
MXHTS85412999
Collector-Emitter Saturation Voltage1.57 V
KRHTS8541299000
QualificationAEC-Q101
Factory Pack Quantity1000
Package / CaseTO-220-3
CNHTS8541290000
JPHTS8541290100
Mounting StyleThrough Hole
CAHTS8541290000
PackagingTube
ImageInfineon / IR AUIRGDC0250
TARIC8541290000
RoHS Details
ManufacturerInfineon
Unit Weight0.211644 oz
BrandInfineon / IR
Continuous Collector Current at 25 C141 A
Product TypeIGBT Transistors
DescriptionIGBT Transistors 1200V IGBT 81A Auto 1.37V at 33A Low VCE
Pd - Power Dissipation543 W
Product CategoryIGBT Transistors
Continuous Collector Current Ic Max141 A
SubcategoryIGBTs
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)