参数项参数值
参数项参数值
ConfigurationSingle
Transistor PolarityN-Channel
Id - Continuous Drain Current31 A
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Rds On - Drain-Source Resistance77 mOhms
Transistor Type1 N-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time23 ns
BrandInfineon Technologies
Unit Weight0.211644 oz
Qg - Gate Charge45 nC
Package / CaseTO-247-3
Mounting StyleThrough Hole
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
Factory Pack Quantity240
DescriptionMOSFET HIGH POWER_NEW
Channel ModeEnhancement
ImageInfineon Technologies IPW60R099P7XKSA1
Product TypeMOSFET
SeriesCoolMOS P7
ManufacturerInfineon
Product CategoryMOSFET
Fall Time5 ns
RoHS Details
SubcategoryMOSFETs
Pd - Power Dissipation117 W
Part # AliasesIPW60R099P7 SP001647038
TradenameCoolMOS
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time15 ns