参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current48 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Height2.3 mm
Rds On - Drain-Source Resistance23 mOhms
Transistor Type1 N-Channel
Width6.22 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
ImageInfineon / IR IRFZ44ESTRLPBF
MXHTS85412999
Length6.5 mm
KRHTS8541299000
DescriptionMOSFET MOSFT 60V 48A 23mOhm 40nC
JPHTS8541290100
ManufacturerInfineon
CAHTS8541290000
Qg - Gate Charge40 nC
Maximum Operating Temperature+ 175 C
TARIC8541290000
CNHTS8541290000
Channel ModeEnhancement
Factory Pack Quantity800
Unit Weight0.019401 oz
SubcategoryMOSFETs
BrandInfineon / IR
Product TypeMOSFET
Product CategoryMOSFET
USHTS8541290095
Pd - Power Dissipation110 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel