参数项参数值
参数项参数值
Forward Transconductance - Min44 S
TechnologySi
Id - Continuous Drain Current100 A
ConfigurationSingle
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2.3 V
Rds On - Drain-Source Resistance3.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time34 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time14 ns
Mounting StyleSMD/SMT
Length5.9 mm
Width5.15 mm
Height1.27 mm
MXHTS85412999
PackagingCut Tape
PackagingMouseReel
PackagingReel
Qg - Gate Charge69 nC
ImageInfineon Technologies BSC042NE7NS3 G
KRHTS8541299000
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Channel ModeEnhancement
Package / CaseTDSON-8
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541290000
Fall Time9 ns
TARIC8541290000
Unit Weight0.006349 oz
RoHS Details
SeriesOptiMOS 3
Pd - Power Dissipation125 W
DescriptionMOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3
BrandInfineon Technologies
TypeOptiMOS 3 Power-Transistor
Part # AliasesSP000657440 BSC42NE7NS3GXT BSC042NE7NS3GATMA1
Product TypeMOSFET
SubcategoryMOSFETs
Factory Pack Quantity5000
Vds - Drain-Source Breakdown Voltage75 V
ManufacturerInfineon
Product CategoryMOSFET
Number of Channels1 Channel
USHTS8541290095
Rise Time17 ns
TradenameOptiMOS