参数项参数值
参数项参数值
ConfigurationSingle
Transistor PolarityN-Channel
Id - Continuous Drain Current240 A
Vgs th - Gate-Source Threshold Voltage2.2 V
TechnologySi
Rds On - Drain-Source Resistance3 MOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time35 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time18 ns
SubcategoryMOSFETs
Mounting StyleSMD/SMT
Package / CaseHSOG-8
Qg - Gate Charge130 nC
Product CategoryMOSFET
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
RoHS Details
ImageInfineon Technologies IAUS240N08S5N019ATMA1
TARIC8541290000
Channel ModeEnhancement
BrandInfineon Technologies
PackagingCut Tape
PackagingReel
ManufacturerInfineon
Fall Time36 ns
USHTS8541290095
Unit Weight0.024879 oz
Factory Pack Quantity1800
Product TypeMOSFET
DescriptionMOSFET MOSFET_(75V 120V(
Part # AliasesIAUS240N08S5N019 SP001792360
Pd - Power Dissipation230 W
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage80 V
Number of Channels1 Channel
Rise Time12 ns