参数项参数值
参数项参数值
Forward Transconductance - Min150 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current460 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage3.5 V
Rds On - Drain-Source Resistance1 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time37 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time18.5 ns
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
Qg - Gate Charge92 nC
Package / CasePowerPAK-8x8-4
Channel ModeEnhancement
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time14 ns
TARIC8541290000
ImageVishay / Siliconix SQJQ142E-T1_GE3
BrandVishay / Siliconix
Pd - Power Dissipation500 W
Factory Pack Quantity2000
Product CategoryMOSFET
Product TypeMOSFET
ManufacturerVishay
SubcategoryMOSFETs
DescriptionMOSFET Automotive N-Channel 40 V (D-S) 175C MOSFET PowerPAK 8 x 8L, 1.24 mO @ 10V mO @ 7.5V mO @ 4.5V
Vds - Drain-Source Breakdown Voltage40 V
USHTS8541290095
TradenameTrenchFET
Number of Channels1 Channel
Rise Time18 ns