参数项参数值
参数项参数值
DC Current Gain hFE Max120 at 100 mA, 2 V
Gain Bandwidth Product fT180 Mhz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current- 3 A
TechnologySi
ConfigurationSingle
Transistor PolarityPNP
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min120
CAHTS8541290000
Height1.5 mm
Width2.5 mm
Length4.5 mm
Maximum Operating Temperature+ 150 C
MXHTS85412999
KRHTS8541299000
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
ManufacturerROHM Semiconductor
JPHTS8541290100
Package / CaseMPT-3
Mounting StyleSMD/SMT
CNHTS8541290000
PackagingReel
PackagingCut Tape
ImageROHM Semiconductor 2SA2071T100Q
RoHS Details
TARIC8541290000
Series2SA2071
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation2000 mW
Factory Pack Quantity1000
DescriptionBipolar Transistors - BJT TRANSISTOR 60V3A PNP CPT3;HI VLT DISCHRG
BrandROHM Semiconductor
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)