参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO75 V, - 60 V
ConfigurationDual
QualificationAEC-Q101
Maximum DC Collector Current600 mA
Collector- Emitter Voltage VCEO Max40 V, - 60 V
Continuous Collector Current600 mA
Transistor PolarityNPN, PNP
TechnologySi
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage1 V, - 1.6 V
DC Collector/Base Gain hfe Min100
Minimum Operating Temperature- 55 C
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
ImageDiodes Incorporated MMDT2227Q-7-F
PackagingReel
PackagingMouseReel
PackagingCut Tape
Product TypeBJTs - Bipolar Transistors
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
DescriptionBipolar Transistors - BJT General Purpose Transistor SOT363 T&R 3K
RoHS Details
Product CategoryBipolar Transistors - BJT
SeriesMMDT2227Q
SubcategoryTransistors
Unit Weight0.000212 oz
Pd - Power Dissipation200 mW