参数项参数值
参数项参数值
DC Current Gain hFE Max480
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO- 30 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max- 30 V
Continuous Collector Current- 0.1 A
TechnologySi
ConfigurationSingle
Transistor PolarityPNP
Collector-Emitter Saturation Voltage- 0.6 V
Emitter- Base Voltage VEBO- 5 V
DC Collector/Base Gain hfe Min210
MXHTS85412999
Width1.25 mm
Mounting StyleSMD/SMT
Height0.8 mm
Length2 mm
SeriesBC858BW
KRHTS8541299000
Minimum Operating Temperature- 65 C
Package / CaseSOT-323-3
CAHTS8541290000
CNHTS8541290000
Maximum Operating Temperature+ 150 C
JPHTS8541290100
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.000176 oz
TARIC8541290000
RoHS Details
Pd - Power Dissipation350 mW
Factory Pack Quantity3000
ImageROHM Semiconductor BC858BWT106
DescriptionBipolar Transistors - BJT PNP 30V 1MA
USHTS8541290095
Part # AliasesBC858BW
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors