参数项参数值
参数项参数值
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 30 V
Collector- Emitter Voltage VCEO Max- 30 V
TechnologySi
ConfigurationSingle
Transistor PolarityPNP
Collector-Emitter Saturation Voltage- 650 mV
Emitter- Base Voltage VEBO- 5 V
DC Collector/Base Gain hfe Min220 at -2 mA, - 5 V
Width1.4 mm
Length3.05 mm
Height1 mm
ImageDiodes Incorporated BC858B-7-F
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Package / CaseSOT-23-3
Minimum Operating Temperature- 65 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.000282 oz
RoHS Details
Pd - Power Dissipation300 mW
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT PNP BIPOLAR
SeriesBC858
BrandDiodes Incorporated
Factory Pack Quantity3000
SubcategoryTransistors
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT