参数项参数值
参数项参数值
DC Current Gain hFE Max480
CAHTS8541290000
Gain Bandwidth Product fT250 MHz
ConfigurationSingle
Collector- Base Voltage VCBO- 30 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max- 30 V
Continuous Collector Current- 0.1 A
KRHTS8541299000
Minimum Operating Temperature- 65 C
Transistor PolarityPNP
TechnologySi
Emitter- Base Voltage VEBO- 5 V
JPHTS8541290100
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT PNP 30V 1MA
Collector-Emitter Saturation Voltage- 0.65 V
Package / CaseSST-3
Maximum Operating Temperature+ 150 C
Length2.9 mm
RoHS Details
DC Collector/Base Gain hfe Min210
ImageROHM Semiconductor BC858BT116
Height0.95 mm
Product TypeBJTs - Bipolar Transistors
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity3000
Mounting StyleSMD/SMT
Width1.3 mm
TARIC8541290000
BrandROHM Semiconductor
CNHTS8541290000
ManufacturerROHM Semiconductor
MXHTS85412999
SeriesBC858B
SubcategoryTransistors
USHTS8541290095
Unit Weight0.001058 oz
Part # AliasesBC858B
Pd - Power Dissipation350 mW