参数项参数值
参数项参数值
DC Current Gain hFE Max450
Gain Bandwidth Product fT250 MHz
CAHTS8541210000
ConfigurationDual
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current100 mA
KRHTS8541219000
Minimum Operating Temperature- 65 C
Transistor PolarityPNP
TechnologySi
Emitter- Base Voltage VEBO5 V
Product CategoryBipolar Transistors - BJT
JPHTS8541210101
DescriptionBipolar Transistors - BJT NPN Silicon AF TRANSISTOR
Collector-Emitter Saturation Voltage250 mV
Maximum Operating Temperature+ 150 C
Package / CaseSOT-23-3
Length2.9 mm
RoHS Details
DC Collector/Base Gain hfe Min200
Height1 mm
Product TypeBJTs - Bipolar Transistors
SeriesBC858
PackagingReel
PackagingCut Tape
PackagingMouseReel
Factory Pack Quantity3000
Mounting StyleSMD/SMT
Width1.3 mm
TARIC8541210000
BrandInfineon Technologies
CNHTS8541210000
ManufacturerInfineon
MXHTS85412101
SubcategoryTransistors
USHTS8541210075
Unit Weight0.000282 oz
Part # AliasesBC858BE6327XT SP000010634 BC858BE6327HTSA1
Pd - Power Dissipation330 mW