参数项参数值
参数项参数值
ImageDiodes Incorporated BC858BW-7-F
Gain Bandwidth Product fT200 MHz
ConfigurationSingle
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max30 V
Transistor PolarityPNP
TechnologySi
Emitter- Base Voltage VEBO5 V
Minimum Operating Temperature- 65 C
BrandDiodes Incorporated
Package / CaseSOT-323-3
Height1 mm
DescriptionBipolar Transistors - BJT PNP BIPOLAR
DC Collector/Base Gain hfe Min220
Length2.2 mm
PackagingMouseReel
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
Mounting StyleSMD/SMT
Width1.35 mm
ManufacturerDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
SeriesBC858
RoHS Details
SubcategoryTransistors
Unit Weight0.000176 oz
Pd - Power Dissipation200 mW