参数项参数值
参数项参数值
DC Current Gain hFE Max475
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 30 V
Maximum DC Collector Current- 0.1 A
Collector- Emitter Voltage VCEO Max- 30 V
TechnologySi
ConfigurationSingle
Transistor PolarityPNP
Collector-Emitter Saturation Voltage- 0.65 V
Emitter- Base Voltage VEBO- 5 V
DC Collector/Base Gain hfe Min220
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageComchip Technology BC858BW-G
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Package / CaseSOT-323-3
Minimum Operating Temperature- 65 C
Unit Weight0.000212 oz
RoHS Details
SeriesBC858
Pd - Power Dissipation150 mW
DescriptionBipolar Transistors - BJT -30, -.1
BrandComchip Technology
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerComchip Technology
Product CategoryBipolar Transistors - BJT