参数项参数值
参数项参数值
Gain Bandwidth Product fT70 MHz
Collector- Base Voltage VCBO300 V
Maximum DC Collector Current500 mA
Collector- Emitter Voltage VCEO Max300 V
Continuous Collector Current200 mA
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage0.5 V
Emitter- Base Voltage VEBO6 V
Length2.9 mm
Width1.3 mm
Height1 mm
MXHTS85412101
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon Technologies BFN26E6327HTSA1
KRHTS8541299000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Package / CaseSOT-23-3
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
TARIC8541210000
RoHS Details
Unit Weight0.000282 oz
Pd - Power Dissipation360 mW
SeriesBFN26
DescriptionBipolar Transistors - BJT NPN Silicon Hi-Volt TRANSISTORS
BrandInfineon Technologies
Part # AliasesBFN 26 E6327 SP000014785
ManufacturerInfineon
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
USHTS8541210075