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SI7625DN-T1-GE3
厂牌：Vishay
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000053374599
描述：MOSFET P-CH D-S 30V 1212-8 PPAK
商品参数
参数项参数值
参数项参数值
JPHTS8541290100
ConfigurationSingle
Forward Transconductance - Min47 S
CAHTS8541290000
Transistor PolarityP-Channel
Id - Continuous Drain Current35 A
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
KRHTS8541299000
Rds On - Drain-Source Resistance5.6 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time55 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Length3.3 mm
Package / CasePowerPAK-1212-8
Height1.04 mm
TARIC8541290000
Typical Turn-On Delay Time15 ns
ManufacturerVishay
PackagingReel
PackagingCut Tape
PackagingMouseReel
DescriptionMOSFET -30V Vds 20V Vgs PowerPAK 1212-8
RoHS Details
ImageVishay Semiconductors SI7625DN-T1-GE3
SeriesSI7
Product CategoryMOSFET
Width3.3 mm
Mounting StyleSMD/SMT
BrandVishay Semiconductors
Factory Pack Quantity3000
CNHTS8541290000
MXHTS85412999
Qg - Gate Charge126 nC
Product TypeMOSFET
TradenameTrenchFET
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Fall Time10 ns
Part # AliasesSI7625DN-GE3
Pd - Power Dissipation52 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time13 ns
Moisture Sensitivity Level1 (Unlimited)