RGT40NS65DGTL

厂牌：ROHM

包装：REEL 1

类目：元器件 > 分立器件 > IGBT晶体管

编号：B000053374741

描述：IGBT SINGLE 650V 40A TO-263S-3; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:161W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-263S; No. of Pins:3Pins; Operating Temperature Max:175蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

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商品参数

参数项参数值

Gate-Emitter Leakage Current+/- 200 nA

Maximum Gate Emitter Voltage30 V

Collector- Emitter Voltage VCEO Max650 V

TechnologySi

Collector-Emitter Saturation Voltage1.65 V

MXHTS85411001

KRHTS8541109000

ImageROHM Semiconductor RGT40NS65DGTL

CNHTS8541100000

USHTS8541100080

CAHTS8541100090

Minimum Operating Temperature- 40 C

Package / CaseTO-263-3

Mounting StyleSMD/SMT

JPHTS8541100901

Maximum Operating Temperature+ 175 C

RoHS Details

PackagingCut Tape

PackagingMouseReel

PackagingReel

SeriesRGT40NS65D

TARIC8541100000

BrandROHM Semiconductor

Unit Weight0.068654 oz

Factory Pack Quantity1000

Product TypeIGBT Transistors

Product CategoryIGBT Transistors

Continuous Collector Current at 25 C40 A

SubcategoryIGBTs

Operating Temperature Range- 40 C to + 175 C

Pd - Power Dissipation161 W

Continuous Collector Current Ic Max40 A

Part # AliasesRGT40NS65D(LPDS)

ManufacturerROHM Semiconductor

DescriptionIGBT Transistors 650V 20A IGBT Stop Trench