参数项参数值
参数项参数值
DC Current Gain hFE Max200 at 2 mA, 5 V
Gain Bandwidth Product fT175 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current- 100 mA
Collector- Emitter Voltage VCEO Max- 45 V
TechnologySi
ConfigurationDual
Transistor PolarityPNP
Collector-Emitter Saturation Voltage- 200 mV
Emitter- Base Voltage VEBO- 5 V
DC Collector/Base Gain hfe Min200 at 2 mA, 5 V
QualificationAEC-Q101
Width1.35 mm
Height1 mm
Length2.2 mm
Maximum Operating Temperature+ 150 C
JPHTS8541210101
MXHTS85412101
BrandNexperia
KRHTS8541219000
Mounting StyleSMD/SMT
Minimum Operating Temperature- 65 C
Package / CaseTSSOP-6
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
RoHS Details
Unit Weight0.000212 oz
Pd - Power Dissipation300 mW
USHTS8541210075
ImageNexperia BCM857BS,115
Part # Aliases934058729115
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerNexperia
Moisture Sensitivity Level1 (Unlimited)