参数项参数值
参数项参数值
Forward Transconductance - Min11 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current3.7 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8.5 ns
Rds On - Drain-Source Resistance88 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time23 ns
Width3.5 mm
Height1.8 mm
Length6.5 mm
MXHTS85412999
Qg - Gate Charge20 nC
KRHTS8541299000
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time4.5 ns
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.003951 oz
ImageON Semiconductor / Fairchild FDT3612
TARIC8541290000
Pd - Power Dissipation3 W
RoHS Details
Part # AliasesFDT3612_NL
Factory Pack Quantity4000
SeriesFDT3612
BrandON Semiconductor / Fairchild
ManufacturerON Semiconductor
Product CategoryMOSFET
Vds - Drain-Source Breakdown Voltage100 V
Product TypeMOSFET
Number of Channels1 Channel
TradenamePowerTrench
DescriptionMOSFET 100V NCh PowerTrench
SubcategoryMOSFETs
USHTS8541290095
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)