参数项参数值
参数项参数值
Forward Transconductance - Min72 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current90 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time13 ns
Width5 mm
Rds On - Drain-Source Resistance6.3 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time14 ns
Length6 mm
Height0.83 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge31 nC
Package / CasePQFN-8
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
CNHTS8541290000
BrandInfineon / IR
ManufacturerInfineon
Factory Pack Quantity4000
TARIC8541290000
Channel ModeEnhancement
Product CategoryMOSFET
RoHS Details
Product TypeMOSFET
DescriptionMOSFET 30V SINGLE N-CH 4.1mOhms 14nC
Fall Time8.5 ns
ImageInfineon / IR IRFH8324TRPBF
SubcategoryMOSFETs
USHTS8541290095
Pd - Power Dissipation54 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time26 ns