IRF630

厂牌：ST(意法半导体)

包装：--

类目：元器件 > 其他器件 > 其他模块

编号：B000049467452

描述：MOSFET N-CH 200V 9A TO-220MOSFET N-Ch 200 Volt 10 Amp EMEA;Single N-Channel 200 V 0.4 Ohm 31 nC 75 W Mesh overlay?II Power Mosfet-TO-220-3 EMEA;Single N-Channel 200 V 0.4 Ohm 31 nC 75 W Mesh overlay?II Power Mosfet-TO-220-3

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商品参数

参数项参数值

Channel TypeN

Maximum Continuous Drain Current9 A

Maximum Drain Source Voltage200 V

Package TypeTO-220

Mounting TypeThrough Hole

Pin Count3

Maximum Drain Source Resistance400 mΩ

Channel ModeEnhancement

Maximum Gate Threshold Voltage4V

Minimum Gate Threshold Voltage2V

Maximum Power Dissipation75 W

Transistor ConfigurationSingle

Maximum Gate Source Voltage-20 V, +20 V

Length10.4mm

Maximum Operating TemperatureMaximum Operating Temperature

Moisture Sensitivity Level1 (Unlimited)