参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current16 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
Typical Turn-On Delay Time10 ns
Typical Turn-Off Delay Time68 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge29 nC
Mounting StyleThrough Hole
Package / CaseTO-220FP-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
CNHTS8541290000
BrandSTMicroelectronics
Factory Pack Quantity1000
ManufacturerSTMicroelectronics
SeriesSTF24N65M2
Channel ModeEnhancement
TARIC8541290000
RoHS Details
Product CategoryMOSFET
DescriptionMOSFET PTD HIGH VOLTAGE
ImageSTMicroelectronics STF24N65M2
Fall Time25.5 ns
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.081130 oz
USHTS8541290095
Pd - Power Dissipation30 W
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel
Rise Time9.5 ns