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FDMS86200
厂牌：ON(安森美)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000051166238
描述：Trans MOSFET N-CH Si 150V 9.6A 8-Pin Power 56 T/R
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min33 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current52 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time13 ns
Rds On - Drain-Source Resistance15 mOhms
Transistor TypeN-Channel
Typical Turn-Off Delay Time27 ns
Width5 mm
Height1.1 mm
Length6 mm
MXHTS85412999
Qg - Gate Charge33 nC
KRHTS8541299000
Package / CaseDualCool-56-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CNHTS8541290000
CAHTS8541290000
Channel ModeEnhancement
Fall Time5.8 ns
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541290000
SeriesFDMS86200
BrandON Semiconductor / Fairchild
Unit Weight0.002402 oz
RoHS Details
Factory Pack Quantity3000
ImageON Semiconductor / Fairchild FDMS86200
Product CategoryMOSFET
Pd - Power Dissipation104 W
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage150 V
DescriptionMOSFET 150V N-Channel PowerTrench MOSFET
TradenamePowerTrench
Number of Channels1 Channel
Rise Time7.9 ns
TypeN-Channel Power Trench MOSFET
Moisture Sensitivity Level1 (Unlimited)