参数项参数值
参数项参数值
Forward Transconductance - Min4 S, 6 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage500 mV, 1.8 V
TechnologySi
Transistor PolarityN-Channel, P-Channel
Id - Continuous Drain Current3.4 A, 2.8 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time3 ns, 4.8 ns
CNHTS8541290000
Rds On - Drain-Source Resistance60 mOhms, 95 mOhms
Typical Turn-Off Delay Time13 ns, 20 ns
Minimum Operating Temperature- 55 C
Package / CaseTSOT-26-6
PackagingCut Tape
PackagingReel
PackagingMouseReel
Mounting StyleSMD/SMT
Qg - Gate Charge13 nC, 9 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMG6602SVTX-7
Factory Pack Quantity3000
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS: 25V-30V
Channel ModeEnhancement
Fall Time3 ns, 13 ns
USHTS8541290095
Unit Weight0.004143 oz
Pd - Power Dissipation1.12 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time5 ns, 7.3 ns