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商品参数
参数项参数值
参数项参数值
PackagingCut Tape (CT)
Package / Case8-VDFN Exposed Pad
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual) Asymmetrical
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max24W, 75W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C22A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds1075pF @ 15V, 5560pF @ 15V
Rds On (Max) @ Id, Vgs4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V, 65nC @ 4.5V
FET Feature-
Vgs(th) (Max) @ Id2.1V @ 250µA, 1.9V @ 250µA
Supplier Device Package8-DFN (5x6)