参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Vgs th - Gate-Source Threshold Voltage5 V
Transistor PolarityN-Channel
Id - Continuous Drain Current10 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 25 V, + 25 V
JPHTS8541290100
Minimum Operating Temperature- 55 C
Product CategoryMOSFET
CAHTS8541290000
Rds On - Drain-Source Resistance375 mOhms
Transistor Type1 N-Channel
ImageSTMicroelectronics STL15N65M5
Maximum Operating Temperature+ 150 C
Package / CasePowerFLAT-5x6-8
PackagingCut Tape
PackagingReel
PackagingMouseReel
DescriptionMOSFET N-CH 650V 0.335Ohm 10A MDmesh M5
Mounting StyleSMD/SMT
TARIC8541290000
Factory Pack Quantity3000
ManufacturerSTMicroelectronics
Product TypeMOSFET
Qg - Gate Charge22 nC
BrandSTMicroelectronics
RoHS Details
MXHTS85412999
SubcategoryMOSFETs
SeriesMdmesh M5
USHTS8541290095
Channel ModeEnhancement
Fall Time12.5 ns
Unit Weight0.002681 oz
CNHTS8541210000
Pd - Power Dissipation52 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel
Rise Time8 ns